Control of microelectromechanical systems membrane curvature by silicon ion implantation

Abstract

A study was performed on control of microelectromechanical systems (MEMS) membrane curvature by silicon ion implantation. The Si+ ion implantations were applied at dose levels of 0.4-5×1016/cm 2 into the gold metallization layer to reduce the mirror curvature. It was found that the curvature change as well as the temperature dependence were dependent on the implantation dose.

DOI
10.1063/1.1611639
Year